| PART |
Description |
Maker |
| ECJ-2VB1H104K ECJ-2VB1H103K ERJ-8GEY0R00 ERJ-8GEYJ |
280W GaN WIDE-BAND PULSED POWER AMPLIFIER
|
RF Micro Devices
|
| RFHA1021U |
60W GaN Wide-Band Pulsed Power Amplifier
|
RF Micro Devices
|
| MAGX-001090-600L00 MAGX-001090-SB0PPR |
GaN on SiC HEMT Pulsed Power Transistor Common-Source Configuration
|
M/A-COM Technology Solutions, Inc.
|
| NPA1006 |
GaN Wideband Power Amplifier, 28 V, 12.5 W
|
M/A-COM Technology Solu...
|
| MAGX-002731-SB1PPR MAGX-002731-030L00 |
GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle
|
M/A-COM Technology Solutions, Inc.
|
| MAGX-002735-SB0PPR MAGX-002735-040L00 |
GaN HEMT Pulsed Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| MAGX-001214-SB0PPR MAGX-001214-125L00 MAGX-001214- |
GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 1200-1400 MHz, 300μs Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| MAGX-000912-250L00 MAGX-000912-SB1PPR |
GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128μs Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
| NPT2020 NPT2020-SMB2 NPT2020-15 |
GaN Wideband Transistor 48 V, 50 W
|
M/A-COM Technology Solu...
|
| RF3826PCBA-411 RF3826TR7 |
30MHz TO 2500MHz, 9W GaN WIDEBAND
30MHz TO 2500MHz, 9W GaN WIDEBAND
|
RF Micro Devices
|
| EFRP-S2287HPM |
1U 280W Redundant Network Power
|
List of Unclassifed Man...
|
| PHL2143 PH1214-3L |
Radar Pulsed Power Transistor3W
Radar Pulsed Power Transistor/ 3W/ 2ms Pulse/ 20% Duty 1.2 - 1.4 GHz
Radar Pulsed Power Transistor, 3W, 2ms Pulse, 20% Duty 1.2 - 1.4 GHz 雷达脉冲功率晶体管的3W毫秒脉冲0％的责任1日至1号吉
|
Tyco Electronics
Velleman, Inc.
|
